%0 Journal Article
%4 sid.inpe.br/mtc-m21b/2015/12.01.15.57
%2 sid.inpe.br/mtc-m21b/2015/12.01.15.57.01
%@doi 10.1134/S1063739715060086
%@issn 1063-7397
%T Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system
%D 2015
%8 Nov.
%9 journal article
%A Trushin, O. S.,
%A Kupryanov, A. N.,
%A Ying, S. -C.,
%A Granato, Enzo,
%A Ala-Nissila, T.,
%@affiliation Academy of Sciences of Russia
%@affiliation Academy of Sciences of Russia
%@affiliation Brown University
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Aalto University School of Science
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress enzo.granato@inpe.br
%B Russian Microelectronics
%V 44
%N 6
%P 410-413
%K Activation barriers, Atomic mechanism, Critical thickness, EAM potential, Heteroepitaxial, Molecular statics, Semi-empirical, Strain relief.
%X Strain relief mechanisms in heteroepitaxial Cu/Ni(001) system are studied using molecular static methods with semiempirical EAM potentials. In particular, the process of a V-shape defect (internal (111) faceting) nucleation is considered, and the corresponding activation barriers and critical thicknesses are estimated.
%@language en
%3 2015_truchin.pdf